Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
<p>Abstract</p> <p>The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated wi...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
SpringerOpen
2009-01-01
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| coleção: | Nanoscale Research Letters |
| Assuntos: | |
| Acesso em linha: | http://dx.doi.org/10.1007/s11671-009-9360-4 |
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