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INVESTIGATION OF POSSIBILITY OF THE MISFIT DISLOCATION DENSITY REDUCTION IN GE/SI FILMS WITH A BUFFER LAYER

The possibility of improving the quality of Ge/Si heteroepitaxial structures with a buffer layer is investigated. It is shown that when using a preparatory layer consisting of nanostructures overgrown with a low-temperature buffer layer, it is possible to manifest the so-called effect of annihilatio...

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Principais autores: V.A. Lapin, A.A. Kravtsov, D.S. Kuleshov, F.F. Malyavin
Format: Artigo
Sprog:Russo
Udgivet: Tver State University 2021-12-01
Serier:Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
Fag:
heteroepitaxy
molecular beam epitaxy
misfit dislocations
buffer layer
defect annihilation
Online adgang:https://physchemaspects.ru/2021/doi-10-26456-pcascnn-2021-13-263/?lang=en
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