Fast source mask co-optimization method for high-NA EUV lithography
Extreme ultraviolet (EUV) lithography with high numerical aperture (NA) is a future technology to manufacture the integrated circuit in sub-nanometer dimension. Meanwhile, source mask co-optimization (SMO) is an extensively used approach for advanced lithography process beyond 28 nm technology node....
সংরক্ষণ করুন:
| প্রধান লেখক: | , , , |
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| বিন্যাস: | Artigo |
| ভাষা: | Inglês |
| প্রকাশিত: |
Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China
2024-04-01
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| মালা: | Opto-Electronic Advances |
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://www.oejournal.org/article/doi/10.29026/oea.2024.230235 |
| ট্যাগগুলো: |
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