A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling
This paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n junction diode have been developed. The results of computer simulated examples have been presented i...
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| Hlavní autor: | |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Wiley
1995-01-01
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| Edice: | Active and Passive Electronic Components |
| On-line přístup: | http://dx.doi.org/10.1155/1995/59312 |
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