A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling
This paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n junction diode have been developed. The results of computer simulated examples have been presented i...
Gorde:
| Egile nagusia: | |
|---|---|
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Wiley
1995-01-01
|
| Saila: | Active and Passive Electronic Components |
| Sarrera elektronikoa: | http://dx.doi.org/10.1155/1995/59312 |
| Etiketak: |
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|