Reducing the Barrier Height in Organic Transistors
Abstract Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors. The reduction of the Schottky barrier height in bottom‐contact top‐gate organic transistors is demonstrated by adding 1 n...
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| Hlavní autoři: | , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Wiley-VCH
2025-04-01
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| Edice: | Advanced Electronic Materials |
| Témata: | |
| On-line přístup: | https://doi.org/10.1002/aelm.202400503 |
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