QR-koodi

Reducing the Barrier Height in Organic Transistors

Abstract Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors. The reduction of the Schottky barrier height in bottom‐contact top‐gate organic transistors is demonstrated by adding 1 n...

Täydet tiedot

Tallennettuna:
Päätekijät: Arash Ghobadi, Cherian J. Mathai, Jacob Cook, Guang Bian, Salahuddin Attar, Mohammed Al‐Hashimi, Shubhra Gangopadhyay, Suchismita Guha
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Wiley-VCH 2025-04-01
Sarja:Advanced Electronic Materials
Aiheet:
atomic layer deposition
Al2O3
donor‐acceptor polymers
organic transistors
Schottky barrier
Linkit:https://doi.org/10.1002/aelm.202400503
Tagit: Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!

Samankaltaisia teoksia