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Structural, Mechanical and Optical Properties of Plasma-chemical Si-C-N Films

An influence of the substrate temperature in the range of 40-400 °C on the properties of the Si-C-N films deposited by plasma enhanced chemical vapor deposition (PECVD) technique using hexamethyldisilazane is analyzed. Study of the structure, chemical bonding, surface morphology, mechanical properti...

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Principais autores: A.O. Kozak, V.I. Ivashchenko, O.K. Porada, L.A. Ivashchenko, T.V. Tomila
Formato: Artigo
Idioma:Inglês
Publicado: Sumy State University 2014-11-01
Series:Журнал нано- та електронної фізики
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Acceso en liña:http://jnep.sumdu.edu.ua/download/numbers/2014/4/articles/jnep_2014_V6_04047.pdf
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