Scalable InAs/InGaAs DWELL structures for broadband infrared emission spanning the E- to O-band

Abstract This study presents the optimization of MOCVD growth conditions for InAs/InGaAs quantum dots-in-a-well (DWELL) structures on 4-inch GaAs substrates incorporating an InGaP seed layer. By precisely tuning the arsenic-to-indium (As/In) ratio, growth temperature, and deposition duration, we ach...

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Bibliografski detalji

Glavni autori:	Driss Mouloua, Mickael Martin, Bouraoui Ilahi, Sebastien Cavalaglio, Nicolas Chauvin, Franck Bassani, Névine Rochat, Jérémy Moeyaert, Bassem Salem, Thierry Baron
Format:	Artigo
Jezik:	Inglês
Izdano:	Nature Portfolio 2025-10-01
Serija:	Scientific Reports
Teme:	InAs/InGaAs DWELL MOCVD Infrared emission Optoelectronics Photoluminescence
Online pristup:	https://doi.org/10.1038/s41598-025-21226-9
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