Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
III–V nitride semiconductors, represented by GaN, have attracted significant research attention. Driven by the growing interest in smart micro-displays, there is a strong desire to achieve enhanced light output from even smaller light-emitting diode (LED) chips. However, the most perplexing phenomen...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
AIP Publishing LLC
2025-08-01
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| Цуврал: | AIP Advances |
| Онлайн хандалт: | http://dx.doi.org/10.1063/5.0261594 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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