Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
III–V nitride semiconductors, represented by GaN, have attracted significant research attention. Driven by the growing interest in smart micro-displays, there is a strong desire to achieve enhanced light output from even smaller light-emitting diode (LED) chips. However, the most perplexing phenomen...
Na minha lista:
| Principais autores: | , , , , , , , , |
|---|---|
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
AIP Publishing LLC
2025-08-01
|
| Serier: | AIP Advances |
| Online adgang: | http://dx.doi.org/10.1063/5.0261594 |
| Tags: |
Ingen Tags, Vær først til at tagge denne postø!
|