Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELS

Abstract Using high‐resolution scanning transmission electron microscopy and low‐loss electron energy loss spectroscopy, the local bandgap (Eg), indium concentration, and strain distribution across multiple InxGa1‐xAs quantum wells (QWs), on a GaAs substrate, within a metamorphic laser structure are...

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Bibliografski detalji

Glavni autori:	Nicholas Stephen, Ivan Pinto‐Huguet, Robert Lawrence, Demie Kepaptsoglou, Marc Botifoll, Agnieszka Gocalinska, Enrica Mura, Quentin Ramasse, Emanuele Pelucchi, Jordi Arbiol, Miryam Arredondo
Format:	Artigo
Jezik:	Inglês
Izdano:	Wiley-VCH 2025-05-01
Serija:	Advanced Materials Interfaces
Teme:	bandgap electron energy loss spectroscopy in concentration InGaAs quantum well strain distribution
Online pristup:	https://doi.org/10.1002/admi.202400897
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