AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping

The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-ve...

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Detalhes bibliográficos

Principais autores:	Jianjun Chang, Dunjun Chen, Junjun Xue, Kexiu Dong, Bin Liu, Hai Lu, Rong Zhang, Youdou Zheng
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2016-01-01
coleção:	IEEE Photonics Journal
Assuntos:	Deep ultraviolet (DUV) light-emitting diode (LED) multiple quantum well last quantum barrier polarization doping
Acesso em linha:	https://ieeexplore.ieee.org/document/7386792/
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