High-Performance AlGaN-Based UV-A Laser Diodes With Polarization-Modulated Superlattice Hole Injection and a Graded Electron-Blocking Layer

Carrier imbalance—characterized by an electron-rich active region caused by limited hole injection—has long been a major challenge for AlGaN-based UV-A laser diodes, severely degrading their optoelectronic performance. In this work, we investigate AlGaN-based UV-A laser diodes emitting...

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Detalhes bibliográficos

Principais autores:	Xinyu Yang, Qilin Tan, Lingfang Yang, Deyi Fu, Na Gao, Shuping Li, Junyong Kang, Rong Zhang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2026-01-01
Colecção:	IEEE Photonics Journal
Assuntos:	Ultraviolet (UV) laser diodes (LDs) AlGaN superlattice p-type doping layer
Acesso em linha:	https://ieeexplore.ieee.org/document/11604130/
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