Electrochemical Behavior of Titanium Nitride Thin Films Deposited on Silicon by Plasma Discharge Technique in Cathodic Cage
Titanium nitride films were deposited on silicon by plasma discharge in cathodic cage with holes and without holes on the sides. Each film was deposited with a pressure of 253 Pa, treatment time of 2 h, and at diverse conditions of temperature and gas flow of N2 and H2. The electrochemical polarizat...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2016-08-01
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| Serie: | Materials Research |
| Soggetti: | |
| Accesso online: | http://www.scielo.br/pdf/mr/v19n5/1516-1439-mr-1980-5373-MR-2015-0241.pdf |
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