Interfacial engineering with chemical bath deposition for high-performance HgTe quantum dot-based short-wave infrared photodetectors

Abstract Colloidal quantum dot-based short-wave infrared (SWIR) photodetectors are often limited by surface traps and high noise levels at room temperature. In this work, we present a low-temperature chemical bath deposition (CBD) strategy to grow a heterojunction passivation layer on HgTe quantum d...

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Hlavní autoři:	Haoran Chen, Yuwei Guo, Yulia V. Kuznetsova, Kseniia A. Sergeeva, Arsenii S. Portniagin, Xie He, Hui Yu, Andrey L. Rogach, Ni Zhao
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	SpringerOpen 2025-10-01
Edice:	Nano Convergence
Témata:	HgTe quantum dots Short-wave infrared phototransistor Chemical bath deposition Interfacial engineering CdS layer
On-line přístup:	https://doi.org/10.1186/s40580-025-00519-9
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