Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence posit...

תיאור מלא

מידע ביבליוגרפי

Principais autores:	Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	MDPI AG 2023-10-01
סדרה:	Micromachines
נושאים:	GaN HEMTs single-event transient effects charge collection
גישה מקוונת:	https://www.mdpi.com/2072-666X/14/10/1948
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!