Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence posit...

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Autors principals:	Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2023-10-01
Col·lecció:	Micromachines
Matèries:	GaN HEMTs single-event transient effects charge collection
Accés en línia:	https://www.mdpi.com/2072-666X/14/10/1948
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