Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates
Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing te...
保存先:
| 主要な著者: | , |
|---|---|
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
AIP Publishing LLC
2015-05-01
|
| シリーズ: | AIP Advances |
| オンライン･アクセス: | http://dx.doi.org/10.1063/1.4922008 |
| タグ: |
タグなし, このレコードへの初めてのタグを付けませんか!
|