Micron-scale FETs of fully epitaxial perovskite oxides using chemical etching
Advent of high mobility perovskite oxide semiconductor BaSnO3 (BSO) has enabled all-perovskite oxide heterostructures such as 2DEGs and FETs. To date all-perovskite oxide device demonstrations have been focused on finding and integrating the compatible perovskite dielectric oxides such as polar LaIn...
Kaydedildi:
| Asıl Yazarlar: | , , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Elsevier
2024-03-01
|
| Seri Bilgileri: | Materials Today Quantum |
| Konular: | |
| Online Erişim: | http://www.sciencedirect.com/science/article/pii/S2950257824000027 |
| Etiketler: |
Etiket eklenmemiş, İlk siz ekleyin!
|