Micron-scale FETs of fully epitaxial perovskite oxides using chemical etching
Advent of high mobility perovskite oxide semiconductor BaSnO3 (BSO) has enabled all-perovskite oxide heterostructures such as 2DEGs and FETs. To date all-perovskite oxide device demonstrations have been focused on finding and integrating the compatible perovskite dielectric oxides such as polar LaIn...
I tiakina i:
| Ngā kaituhi matua: | , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Elsevier
2024-03-01
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| Rangatū: | Materials Today Quantum |
| Ngā marau: | |
| Urunga tuihono: | http://www.sciencedirect.com/science/article/pii/S2950257824000027 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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