Enhanced photogalvanic effect in Janus PtSSe-HfSSe lateral heterojunctions

The enhancement of photogalvanic effect (PGE) is vital for the application of optoelectronics. We use the ab initio quantum transport method to study the possible enhancement of PGE by importing a lateral PtSSe-HfSSe heterojunction. Under irradiation of linearly polarized light with photon energies...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Hong Li, Jiahui Li, Fengbin Liu, Kang An, Jing Lu
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Elsevier 2024-07-01
Schriftenreihe:	Next Materials
Schlagworte:	PtSSe-HfSSe lateral heterojunction PGE photocurrent Enhancement Extinction ratio Ab initio quantum transport method
Online-Zugang:	http://www.sciencedirect.com/science/article/pii/S2949822824000133
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