A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability
Abstract In this work, a novel deep trench CSTBT (DT-CSTBT) features emitter trench and the P-layer is proposed and investigated by simulation. The self-biased pMOS, comprising an emitter trench, N-CS layer, P-layer, and P-well, demonstrates an excellent clamping effect potential. The proposed DT-CS...
Gardado en:
| Principais autores: | , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Portfolio
2025-01-01
|
| Series: | Scientific Reports |
| Assuntos: | |
| Acceso en liña: | https://doi.org/10.1038/s41598-025-85530-0 |
| Tags: |
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|