High-Performance p-Cu<sub>2</sub>O/n-β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Barrier Schottky Diodes with Copper Contact
This study demonstrates the fabrication of high-performance p-Cu<sub>2</sub>O/n-β-Ga<sub>2</sub>O<sub>3</sub> heterojunction barrier Schottky (JBS) diodes using copper as a low-work-function anode metal. By optimizing the Cu<sub>2</sub>O spacing to 4 μm, the device achieves a turn-on voltage of 0.78...
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| Autors principals: | , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2025-12-01
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| Col·lecció: | Nanomaterials |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2079-4991/15/24/1840 |
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