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Ultraviolet Photodetectors Based on 4H‐SiC With Honeycomb‐Like Light‐Trapping Structures

ABSTRACT Silicon carbide (SiC), as a wide‐bandgap semiconductor, exhibits significant potential for visual‐blind ultraviolet (UV) detection due to its excellent material properties. To further improve the performance of SiC UV detectors, we introduce the honeycomb‐like light‐trapping microstructures...

Täydet tiedot

Tallennettuna:
Päätekijät: Huifan Xiong, Xiliang Luo, Qunsi Yang, Yibo Hu, Jieshi Chen, Lihui Song, Deren Yang, Xiaodong Pi
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Wiley 2026-04-01
Sarja:Advanced Science
Aiheet:
light‐trapping
photoelectrochemical etching
self‐power
silicon carbide
Linkit:https://doi.org/10.1002/advs.74352
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