A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure

Photodetectors (PDs) based on 4H silicon carbide (SiC) have garnered significant interest due to their exceptional optoelectronic properties. However, their photoresponse is typically restricted to the ultraviolet (UV) region, with limited light absorption beyond 380 nm, which constrains their utili...

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Үндсэн зохиолчид:	Salah Abdo, Khalil As’ham, Ambali Alade Odebowale, Sanjida Akter, Amer Abdulghani, Ibrahim A. M. Al Ani, Haroldo Hattori, Andrey E. Miroshnichenko
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2025-01-01
Цуврал:	Applied Sciences
Нөхцлүүд:	4H silicon carbide (SiC) tantalum carbide (TaC) near ultraviolet (NUV) photodetector responsivity
Онлайн хандалт:	https://www.mdpi.com/2076-3417/15/2/970
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!