Below 1% Reflectance for Black GaAs Surface Prepared by Facile Two‐Step Wet Chemical Treatment: Hydrogen Peroxide and Water

To increase performance of many photonic devices (e.g., solar cell, light emitting diode (LED), photodetector), it is essential to decrease light reflection at device interfaces. Sustainable and scalable methods have been intensively developed for manufacturing nanostructured antireflection coatings...

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Autors principals:	Zahra Jahanshah Rad, Johanna Laaksonen, Valtteri Alitupa, Mikko Miettinen, Kari Iltanen, Juha‐Pekka Lehtiö, Sari Granroth, Ilari Angervo, Marko Punkkinen, Risto Punkkinen, Mikhail Kuzmin, Ermei Mäkilä, Pekka Laukkanen, Petriina Paturi, Kalevi Kokko, Sami Vuori, Mika Lastusaari, Harishchandra Singh, Marko Huttula, Manvedra Narayan Singh, Antti Tukiainen, Heidi Tuorila, Helmer Piirilä, Jukka Viheriälä, Mircea Guina, Jekaterina Kozlova, Mihkel Rähn, Aile Tamm
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2025-09-01
Col·lecció:	Advanced Photonics Research
Matèries:	antireflection coatings black GaAs photodetectors wet chemical methods
Accés en línia:	https://doi.org/10.1002/adpr.202400200
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