The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from...
Wedi'i Gadw mewn:
| Prif Awduron: | , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Universitas Syiah Kuala, Faculty of Mathematics and Natural Science
2014-07-01
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| Cyfres: | Jurnal Natural |
| Mynediad Ar-lein: | http://jurnal.unsyiah.ac.id/natural/article/view/1518 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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