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Flexible and Reliable Parylene‐C Resistive Random Access Memory Array with Graphene Barrier for Neuromorphic Systems

Flexible parylene‐C (PPXC)‐based resistive random access memory (RRAM) has garnered attention as a synaptic device suitable for flexible neuromorphic systems due to its low‐power consumption and high‐speed switching characteristics. However, Negative‐SET has been a key factor contributing to reliabi...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Seonjeong Lee, Sookyeong Kim, Boram Kim, Rayoung Park, Dong‐Wook Park, Yoon Kim
Format: Artigo
Sprache:Inglês
Veröffentlicht: Wiley-VCH 2025-08-01
Schriftenreihe:Small Structures
Schlagworte:
graphene
Negative‐SET
neuromorphic
parylene‐C
resistive random access memories
Online-Zugang:https://doi.org/10.1002/sstr.202500056
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