Study on ESD characteristics of T-shape gate GaN HEMT microwave devices
The failure mechanisms and influencing factors of Si-based GaN HEMT devices under ESD events were systematically investigated. The study analyzed the failure voltage distribution of the devices under various bias conditions and utilized EMMI to pinpoint abnormal regions responsible for device degrad...
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| Автори: | , , , , |
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| Формат: | Artigo |
| Мова: | Chinês |
| Опубліковано: |
National Computer System Engineering Research Institute of China
2025-04-01
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| Серія: | Dianzi Jishu Yingyong |
| Предмети: | |
| Онлайн доступ: | http://www.chinaaet.com/article/3000171272 |
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