Toward Ideal Low‐Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management

Abstract The pursuit of sub‐1‐nm field‐effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternativ...

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Autors principals:	Wonjun Shin, Junsung Byeon, Ryun‐Han Koo, Jungmoon Lim, Jung Hyeon Kang, A‐Rang Jang, Jong‐Ho Lee, Jae‐Joon Kim, SeungNam Cha, Sangyeon Pak, Sung‐Tae Lee
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley 2024-07-01
Col·lecció:	Advanced Science
Matèries:	1/f noise 2D TMDC contact resistance copper sulfide low‐frequency noise self‐healing effect
Accés en línia:	https://doi.org/10.1002/advs.202307196
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