Toward Ideal Low‐Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management

Abstract The pursuit of sub‐1‐nm field‐effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternativ...

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Autori principali:	Wonjun Shin, Junsung Byeon, Ryun‐Han Koo, Jungmoon Lim, Jung Hyeon Kang, A‐Rang Jang, Jong‐Ho Lee, Jae‐Joon Kim, SeungNam Cha, Sangyeon Pak, Sung‐Tae Lee
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley 2024-07-01
Serie:	Advanced Science
Soggetti:	1/f noise 2D TMDC contact resistance copper sulfide low‐frequency noise self‐healing effect
Accesso online:	https://doi.org/10.1002/advs.202307196
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