Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes

The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the nanowire geometry. With identical material pa...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Shaofei Zhang, David Arto Laleyan, Qi Wang, Zetian Mi
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley 2015-10-01
Цуврал:	The Journal of Engineering
Нөхцлүүд:	nanowires gallium compounds indium compounds III-V semiconductors wide band gap semiconductors light emitting diodes epitaxial growth GaN-InGaN design hole transport axial nanowire light-emitting diodes carrier transport nanowire geometry
Онлайн хандалт:	http://digital-library.theiet.org/content/journals/10.1049/joe.2014.0349
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!