Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory
The multilevel per cell technology and continued scaling down process technology significantly improves the storage density of NAND flash memory but also brings about a challenge in that data reliability degrades due to the serious noise. To ensure the data reliability, many noise mitigation technol...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2021-07-01
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| Colecção: | Micromachines |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2072-666X/12/8/879 |
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