SiGe HBT wideband amplifier for millimeter wave applications
A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz...
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| Main Authors: | , , |
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| Format: | Artigo |
| Language: | Inglês |
| Published: |
National Institute of Telecommunications
2023-06-01
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| Series: | Journal of Telecommunications and Information Technology |
| Subjects: | |
| Online Access: | https://jtit.pl/jtit/article/view/742 |
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