Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation

In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and the synergistic effects of total dose irradiation on the single-event transient (SET) in silicon-germanium heterojunction bipolar transistors on silic...

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主要な著者:	Yuedecai Long, Abuduwayiti Aierken, Xuefei Liu, Mingqiang Liu, Changsong Gao, Gang Wang, Degui Wang, Sandip Majumdar, Yundong Xuan, Mengxin Liu, Jinshun Bi
フォーマット:	Artigo
言語:	Inglês
出版事項:	MDPI AG 2025-04-01
シリーズ:	Micromachines
主題:	SiGe heterojunction bipolar transistor silicon-on-insulator single-event transient heavy ions
オンライン･アクセス:	https://www.mdpi.com/2072-666X/16/5/532
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