Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors
Low cost and low power consumption of transistors are needed for the development of internet of things. Here Chung et al. develop a high performance n-type oxide thin film transistor by introducing a ligand for crosslinking nanoparticles and polymers, obtaining a near-ideal hybrid dielectric layer.
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Portfolio
2022-11-01
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| Col·lecció: | Nature Communications |
| Accés en línia: | https://doi.org/10.1038/s41467-022-34772-x |
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