A Feedforward Active Gate Voltage Control Method for SiC MOSFET Driving
A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed drive...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Shahid Chamran University of Ahvaz
2023-01-01
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| Col·lecció: | Journal of Applied Research in Electrical Engineering |
| Matèries: | |
| Accés en línia: | https://jaree.scu.ac.ir/article_18107_d594ac9c1655317f8143326142a925be.pdf |
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