Light-Induced Etching of Silicon
In this work, an ordinary light is used for photo-chemical etching of n-typesilicon wafer in HF solution. Scanning electron microscopy is used to monitorchanges in surface morphology produced during the etching process. Uniformporous layer has been observed for various irradiation time. Our techniqu...
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| Hlavní autoři: | , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Unviversity of Technology- Iraq
2007-03-01
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| Edice: | Engineering and Technology Journal |
| Témata: | |
| On-line přístup: | https://etj.uotechnology.edu.iq/article_181374_448f80922039b888b45a6536a9d89e3c.pdf |
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