Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth
During silicon crystal growth, oxygen, a well-known major impurity, affects the final silicon wafer's mechanical and electrical properties. This study focused on regulation of discharge of different concentrations of oxygen from the quartz crucible into the silicon melt while considering the crucibl...
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| Автори: | , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Elsevier
2024-04-01
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| Серія: | Heliyon |
| Предмети: | |
| Онлайн доступ: | http://www.sciencedirect.com/science/article/pii/S2405844024053775 |
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