Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs

The short-circuit (SC) immunity of power silicon carbide (SiC) MOSFETs is critical for high-reliability applications, where robust monitoring and protection strategies are essential to ensure system safety. Despite their superior voltage blocking capabilities and high energy efficiency, SiC MOSFETs...

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Detalhes bibliográficos

Principais autores:	Joao Oliveira, Jean-Michel Reynes, Hervé Morel, Pascal Frey, Olivier Perrotin, Laurence Allirand, Stéphane Azzopardi, Michel Piton, Fabio Coccetti
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2024-11-01
Colecção:	Energies
Assuntos:	SiC MOSFET short circuit test methodology failure analysis
Acesso em linha:	https://www.mdpi.com/1996-1073/17/21/5476
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