High-temperature Reliability of 1 200 V SiC Power MOSFETs
High-temperature reliability is currently a key issue limiting the application of SiC MOSFET devices in high-temperature environment. It intruduced the DC electrical performance of 1 200 V SiC MOSFETs, which was fabricated based on domestic process platform, and then its high-temperature reliability...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Chinês |
| Publicado em: |
Editorial Office of Control and Information Technology
2016-01-01
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| coleção: | Kongzhi Yu Xinxi Jishu |
| Assuntos: | |
| Acesso em linha: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.013 |
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