A High-Dynamic-Range BroadBand MMIC GaN Mixer for Microwave Conversion TX/RX
This paper presents a wideband, high-performance monolithic microwave integrated circuit (MMIC) mixer fabricated in a 150-nm Gallium Nitride (GaN) technology from the UMS Foundry. The design addresses the inherently high local oscillator (LO) drive requirement by integrating a dedicated driver ampli...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IEEE
2026-01-01
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| Col·lecció: | IEEE Access |
| Matèries: | |
| Accés en línia: | https://ieeexplore.ieee.org/document/11396924/ |
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