A High-Dynamic-Range BroadBand MMIC GaN Mixer for Microwave Conversion TX/RX

This paper presents a wideband, high-performance monolithic microwave integrated circuit (MMIC) mixer fabricated in a 150-nm Gallium Nitride (GaN) technology from the UMS Foundry. The design addresses the inherently high local oscillator (LO) drive requirement by integrating a dedicated driver ampli...

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Bibliografiske detaljer

Principais autores:	Jose Luis Jimenez-Martin, Vicente Gonzalez-Posadas, David Espinosa-Adams, A. Prieto-Poyatos, E. Oreja-Gigorro, Javier Montero-de-Paz, Juan Jose Sanchez-Martinez, Wilmar Hernandez
Format:	Artigo
Sprog:	Inglês
Udgivet:	IEEE 2026-01-01
Serier:	IEEE Access
Fag:	Monolithic microwave integrated circuit broadband gallium nitride noise figure FET mixer balun
Online adgang:	https://ieeexplore.ieee.org/document/11396924/
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