Extra hole threshold in HfO2 ferroelectric phase stabilization
Abstract Understanding ferroelectric phase stability in hafnium-based oxides is crucial for high-quality thin-film fabrication and device applications. Multiple strategies stabilize the phase, with evidence highlighting extra holes’ key role. However, research on extra holes’ impact on ferroelectric...
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| Autors principals: | , , , , , , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Portfolio
2025-12-01
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| Col·lecció: | Communications Physics |
| Accés en línia: | https://doi.org/10.1038/s42005-025-02438-x |
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