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Enhanced mid-infrared light-matter coupling in heavily-doped p-germanium due to interplay between plasmonic and inter-subband contributions

Abstract The development of germanium-based mid-infrared (MIR) optoelectronic technologies is central to advancing compact, high-performance on-chip systems. While plasmonic field enhancement in heavily-doped semiconductors is widely exploited to intensify light-matter interactions, yet p-type germa...

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Principais autores: Aravind N. Subramanian, Saud Bin Anooz, Sergey G. Pavlov, Carsten Richter, Géza Szántó, Mariia Sidorova, Peter Petrik, R. Radhakrishnan Sumathi
Formato: Artigo
Idioma:Inglês
Publicado: Nature Portfolio 2026-06-01
Series:Communications Materials
Acceso en liña:https://doi.org/10.1038/s43246-026-01241-7
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