Enhanced mid-infrared light-matter coupling in heavily-doped p-germanium due to interplay between plasmonic and inter-subband contributions
Abstract The development of germanium-based mid-infrared (MIR) optoelectronic technologies is central to advancing compact, high-performance on-chip systems. While plasmonic field enhancement in heavily-doped semiconductors is widely exploited to intensify light-matter interactions, yet p-type germa...
में बचाया:
| मुख्य लेखकों: | , , , , , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Nature Portfolio
2026-06-01
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| श्रृंखला: | Communications Materials |
| ऑनलाइन पहुंच: | https://doi.org/10.1038/s43246-026-01241-7 |
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