Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering

ABSTRACT Gallium oxide (Ga2O3) is an ultra‐wide bandgap semiconductor with several polymorphs, among which the orthorhombic κ‐phase is particularly attractive for high‐power electronics, non‐volatile memory, and charge‐tunable devices due to its large spontaneous polarization and potential ferroelec...

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Principais autores:	Alwin Wüthrich, Benjamin M. Janzen, Roland Gillen, Hans Tornatzky, Andrea Ardenghi, Oliver Bierwagen, Anna Sacchi, Piero Mazzolini, Maximilian Ries, Temma Ogawa, Hiroyuki Nishinaka, Markus R. Wagner
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	Wiley-VCH 2026-02-01
סדרה:	Advanced Electronic Materials
נושאים:	density functional pertubation theory Gallium Oxide phonon modes Raman scattering orthorhombic structure
גישה מקוונת:	https://doi.org/10.1002/aelm.202500497
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