Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering

ABSTRACT Gallium oxide (Ga2O3) is an ultra‐wide bandgap semiconductor with several polymorphs, among which the orthorhombic κ‐phase is particularly attractive for high‐power electronics, non‐volatile memory, and charge‐tunable devices due to its large spontaneous polarization and potential ferroelec...

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Главные авторы:	Alwin Wüthrich, Benjamin M. Janzen, Roland Gillen, Hans Tornatzky, Andrea Ardenghi, Oliver Bierwagen, Anna Sacchi, Piero Mazzolini, Maximilian Ries, Temma Ogawa, Hiroyuki Nishinaka, Markus R. Wagner
Формат:	Artigo
Язык:	Inglês
Опубликовано:	Wiley-VCH 2026-02-01
Серии:	Advanced Electronic Materials
Предметы:	density functional pertubation theory Gallium Oxide phonon modes Raman scattering orthorhombic structure
Online-ссылка:	https://doi.org/10.1002/aelm.202500497
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