Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Abstract The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Amine Slassi, Linda‐Sheila Medondjio, Andrea Padovani, Francesco Tavanti, Xu He, Sergiu Clima, Daniele Garbin, Ben Kaczer, Luca Larcher, Pablo Ordejón, Arrigo Calzolari
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley-VCH 2023-04-01
Цуврал:	Advanced Electronic Materials
Нөхцлүүд:	devices DFT electrical characteristics Ginestra materials ovonic threshold switching
Онлайн хандалт:	https://doi.org/10.1002/aelm.202201224
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!